Low-voltage optical phase modulation by electric-field-induced phase transition of KTN bulk crystal

被引：0
|
作者：
Inagaki, Takahiro [1 ]
Imai, Tadayuki [2 ]
Miyazu, Jun [2 ]
Takesue, Hiroki [1 ]
Kobayashi, Junya [2 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan
来源：
2014 IEEE PHOTONICS CONFERENCE (IPC) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a low-voltage optical phase modulation that employs the electric-field induced paraelectric-ferroelectric phase transition of KTN crystal. A large refractive-index change occurs within a narrow applied-voltage range as a result of structural changes in the crystal. We reduced the half-wave voltage to 2.1 Vp-p, which is very small for a 1-mm-thick bulk crystal.
引用
收藏
页码：390 / 391
页数：2
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