The linearly graded two-dimensional p-n junction

被引：6
|
作者：
Petrosyan, S
Yesayan, A
Reuter, D
Wieck, AD
机构：
[1] Yerevan State Univ, Yerevan 375025, Armenia
[2] Russian Armenian State Univ, Yerevan 375051, Armenia
[3] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期
关键词：
D O I：
10.1063/1.1736316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the potential distribution, depletion length, and capacitance-voltage characteristics of two-dimensional (2D) linearly graded p-n junctions. It is shown that the total-depletion length is proportional to the square root of the contact potential difference, in contrast to the linear dependence for an abrupt 2D junction. The junction capacitance varies logarithmically with the applied voltage. A graph of capacitance as a function of logarithm of voltage drop across the depletion layer should be a straight line, whose slope indicates the abruptness of a 2D p-n junction. (C) 2004 American Institute of Physics.
引用
收藏
页码：3313 / 3315
页数：3
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