Conductance of a lateral p-n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states

被引：3
|
作者：
Min'kov, G. M. [1 ,2 ]
Sherstobitov, A. A. [1 ,2 ]
Germanenko, A. V. [2 ]
Rut, O. E. [2 ]
Dvoretskii, S. A. [3 ]
Mikhailov, N. N. [3 ]
机构：
[1] Russian Acad Sci, Mikheev Inst Met Phys, Ural Branch, Ekaterinburg 620137, Russia
[2] Ural Fed Univ, Ekaterinburg 620000, Russia
[3] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2015年 / 101卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
JETP Letter; Gate Voltage; Edge State; HgTe; Closed Symbol;
D O I：
10.1134/S0021364015070115
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The conductance of a lateral p-n junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the p-n junction and the edge states is possible upon the simultaneous measurement of the resistance of the p-n junction regions in channels with substantially different widths.
引用
收藏
页码：469 / 473
页数：5
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