Effect of impact damage on electrical resistivity of C/C-SiC composites

被引：0
|
作者：
Srivastava, VK
Maile, K
Bothe, K
Udoh, A
机构：
[1] Univ Stuttgart, Staatliche Mat Prufungsanstalt, D-70569 Stuttgart, Germany
[2] Banaras Hindu Univ, Dept Mech Engn, Varanasi 221005, Uttar Pradesh, India
来源：
ZEITSCHRIFT FUR METALLKUNDE | 2003年 / 94卷 / 08期
关键词：
C/C-SiC composites; weight-drop impact energy; indentation; electrical resistivity; damage; lockin thermography;
D O I：
10.3139/146.030930
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The main objective of the present work was to study the low-velocity weight-drop impact damage behaviour of carbon-carbon silicon carbide (C/C-SiC) composites on electrical resistivity of the direct-current potential drop method. The results show that the electrical resistivity increases with increasing impact energy, which confirms that pre-microcracks of C/C-SiC composite grow very rapidly with a little amount of impact load and turn into a loss of conductivity of the material.
引用
收藏
页码：930 / 933
页数：4
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