Two-Dimensional Atomic Sheets for Heterogeneous Flexible High-Frequency and Low-Power Nanoelectronics [Invited]

Two-dimensional atomic sheets have emerged as near ideal nanomaterials to overcome the long running challenge of achieving Si CMOS like performance on soft substrates at scales that can be suitable for large integration. For instance, the high mobility and velocity accessible in monolayer graphene affords GHz analog transistor devices while the large bandgap of graphene's semiconducting analogues (MoS2 and similar dichalcogenides) naturally lead to near ideal digital transistors with high on/off current ratio and low subthreshold slope while sustaining mobilities much larger than organic semiconductors or amorphous bulk semiconductors. Together, these physically similar atomic layers with vastly different electronic properties can serve as the electronic platform for low-power digital, high-speed mixed-signal, and high-frequency analog transistor building blocks for flexible nanoelectronic systems. Here we report GHz graphene transistors operating in the microwave frequency range, and address mobility and contact resistance extraction in semiconducting atomic sheets. Further progress on heterogeneous integration of graphene and 2D semiconducting crystals can enable future flexible nanosystems.