Analytical, Numerical-, and Measurement-Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

被引：70
|
作者：
Ndip, Ivan [1 ,2 ]
Zoschke, Kai [1 ]
Loebbicke, Kai [1 ]
Wolf, M. Juergen [1 ]
Guttowski, Stephan [1 ]
Reichl, Herbert [1 ,2 ]
Lang, Klaus-Dieter [1 ,2 ]
Henke, Heino [2 ]
机构：
[1] Fraunhofer Inst Reliabil & Microintegrat, D-13355 Berlin, Germany
[2] Tech Univ Berlin, D-10587 Berlin, Germany
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2014年 / 4卷 / 03期
关键词：
Analytical; numerical-; and measurement-based methods; RLCG parameters; through-silicon via (TSV); THROUGH-SILICON; MODEL; TRANSMISSION; INDUCTANCE; 3-D;
D O I：
10.1109/TCPMT.2013.2279688
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.
引用
收藏
页码：504 / 515
页数：12
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