Characterization of dual damascene Cu-SiO2 interconnects in time and frequency domains

被引：0
|
作者：
Bermond, C [1 ]
Flechet, B [1 ]
Arnal, V [1 ]
Farcy, A [1 ]
Torres, J [1 ]
Morand, Y [1 ]
Le Carval, G [1 ]
Salik, R [1 ]
Bauzac, S [1 ]
Angenieux, G [1 ]
机构：
[1] Univ Savoie, LAHC, F-73376 Le Bourget Du Lac, France
来源：
ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000) | 2001年
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Electrical performance issues associated with advanced Cu-SiO2 on-chip interconnects were studied. Wiring geometries, materials and process affect performances as delays, rise time /fall time, voltage levels and crosstalk. A complete procedure to measure, simulate and predict highspeed performances of long lossy IC interconnects has been developed. Electrical parameters R, L, C, G were extracted from measurements in frequency domain and compared to the electromagnetic (EM) modeling. Finally, impacts of design, new materials and process on the transmission of high-speed digital signals were investigated by time domain measurements and predicted by simulations.
引用
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页码：19 / 24
页数：6
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