Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

被引：0

作者：

Krishnamoorthy, A ^{[1
]}

Qiang, G ^{[1
]}

Vairagar, AV ^{[1
]}

Mhaisalkar, S ^{[1
]}

机构：

[1] Inst Microelect, Semicond Proc & Technol Adv Interconnects, Singapore, Singapore

来源：

MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003 | 2003年 / 766卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.

引用

页码：133 / 138

页数：6

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