A physically-based C∞-continuous model for accumulation-mode SOI pMOSFET's

被引：10

作者：

Iñíguez, B ^{[1
]}

Gentinne, B

Dessard, V

Flandre, D

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] Alcatel Microelect NV, B-9700 Oudenaarde, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 12期

关键词：

capacitance measurements; contact modeling; short-channel effects; SOI MOSFET's;

D O I：

10.1109/16.808063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short channel effects have also been accounted for, We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-mu m.

引用

页码：2295 / 2303

页数：9

共 50 条

[41] Study of the leakage drain current components in accumulation-mode SOI pMOSFETS at high-temperatures
Bellodi, M
Martino, JA
PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1999, 99 (03): : 287 - 292
[42] SUBTHRESHOLD SLOPE OF LONG-CHANNEL, ACCUMULATION-MODE P-CHANNEL SOI MOSFETS
COLINGE, JP
FLANDRE, D
VANDEWIELE, F
SOLID-STATE ELECTRONICS, 1994, 37 (02) : 289 - 294
[43] An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions
Song, SS
Shin, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) : 1997 - 1999
[44] A novel physically-based model for updating landslide susceptibility
Wang, H. J.
Xiao, T.
Li, X. Y.
Zhang, L. L.
Zhang, L. M.
ENGINEERING GEOLOGY, 2019, 251 : 71 - 80
[45] A PHYSICALLY-BASED INFILTRATION-MODEL FOR FURROW IRRIGATION
FONTEH, MF
PODMORE, T
AGRICULTURAL WATER MANAGEMENT, 1993, 23 (04) : 271 - 284
[46] A Physically-Based Matching Model for HiSIM_HV
Hamani, Rachid
Martins, J. R. O. R.
Wald, Hagen
Gessner, Joerg
Ing, Michaelina Ong Ing
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 54 - 57
[47] Field validation of a physically-based model for bioretention systems
Bonneau, Jeremie
Kouyi, Gislain Lipeme
Lassabatere, Laurent
Fletcher, Tim D.
JOURNAL OF CLEANER PRODUCTION, 2021, 312
[48] Chinese Hairy Brush: A Physically-based Model for Calligraphy
Bai Bendu
Zhang Yanning
Wong Kam-Wah
Li Ying
CHINESE JOURNAL OF ELECTRONICS, 2009, 18 (02): : 302 - 306
[49] A physically-based model with adaptive refinement for facial animation
Zhang, Y
Prakash, EC
Sung, E
COMPUTER ANIMATION 2001, PROCEEDINGS, 2001, : 28 - +
[50] A physically-based abrasive wear model for composite materials
Lee, GY
Dharan, CKH
Ritchie, RO
WEAR, 2002, 252 (3-4) : 322 - 331

← 1 2 3 4 5 →