A physically-based C∞-continuous model for accumulation-mode SOI pMOSFET's

被引：10

作者：

Iñíguez, B ^{[1
]}

Gentinne, B

Dessard, V

Flandre, D

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] Alcatel Microelect NV, B-9700 Oudenaarde, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 12期

关键词：

capacitance measurements; contact modeling; short-channel effects; SOI MOSFET's;

D O I：

10.1109/16.808063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short channel effects have also been accounted for, We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-mu m.

引用

页码：2295 / 2303

页数：9

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