Understanding and modelling the PBTI reliability of thin-film IGZO transistors

被引：35

作者：

Chasin, A. ^{[1
]}

Franco, J. ^{[1
]}

Triantopoulos, K. ^{[1
,2
]}

Dekkers, H. ^{[1
]}

Rassoul, N. ^{[1
]}

Belmonte, A. ^{[1
]}

Smets, Q. ^{[1
]}

Subhechha, S. ^{[1
]}

Claes, D. ^{[1
,2
]}

van Setten, M. J. ^{[1
]}

Mitard, J. ^{[1
]}

Delhougne, R. ^{[1
]}

Afanas'ev, V ^{[1
,2
]}

Kaczer, B. ^{[1
]}

Kar, G. S. ^{[1
]}

机构：

[1] IMEC, Leuven, Belgium

[2] KULeuven, Leuven, Belgium

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the impact of the gate-dielectric on the Positive Bias Temperature Instability (PBTI) of IGZO thin-film transistors (TFT). We show that PBTI is controlled by the gate-dielectric pre-existent electron traps and its hydrogen content. The degradation process can be composed of up to four different mechanisms with different time kinetics, voltage acceleration factors and activation energies. A simplified physics-based model is used to reproduce stress and relaxation traces recorded in a wide range of test conditions. Gate-dielectric optimization enables scaled EOT (2.5nm) IGZO TFT to achieve a record lifetime of similar to 1 year continuous operation at 95 degrees C and V-ov = 1V, with a strict failure criterion of vertical bar Delta V-th vertical bar<30mV.

引用

页数：4

共 50 条

[41] Impact of Passivation Conditions on Characteristics of Bottom-Gate IGZO Thin-Film Transistors
Thi Thu Thuy Nguyen
Aventurier, Bernard
Terlier, Tanguy
Barnes, Jean-Paul
Templier, Francois
JOURNAL OF DISPLAY TECHNOLOGY, 2015, 11 (06): : 554 - 558
[42] THIN-FILM TRANSISTORS
ANDERSON, JC
THIN SOLID FILMS, 1976, 36 (02) : 299 - 312
[43] C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering
Zhang, Junpeng
Wen, Xizhang
Hu, Luyao
Xu, Wangying
Zhu, Deliang
Cao, Peijiang
Liu, Wenjun
Han, Shun
Liu, Xinke
Jia, Fang
Zeng, Yuxiang
Lu, Youming
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (09) : 2388 - 2396
[44] Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection
Lu, Huiling
Zhou, Xiaoliang
Liang, Ting
Zhang, Letao
Zhang, Shengdong
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 5 (06): : 504 - 508
[45] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
Hoshino, Ken
Hong, David
Chiang, Hai Q.
Wager, John F.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) : 1365 - 1370
[46] Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing
Oh, Se-I
Choi, Godeuni
Hwang, Hyunsang
Lu, Wu
Jang, Jae-Hyung
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (08) : 2537 - 2541
[47] Performance improvements of IGZO and ZnO thin-film transistors by laser-irradiation treatment
Yang, Ya-Hui
Yang, Sidney S.
Chou, Kan-Sen
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2011, 19 (03) : 247 - 252
[48] Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
Hyung, Gun Woo
Wang, Jian-Xun
Li, Zhao-Hui
Koo, Ja-Ryong
Kwon, Sang Jik
Cho, Eou-Sik
Kim, Young Kwan
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (06) : 4052 - 4055
[49] The Influences of Oxygen Incorporation on the Defect Trap States of a-IGZO Thin-film Transistors
Lo, Chun-Chieh
Hsieh, Tsung-Eong
WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13, 2012, 45 (07): : 239 - 243
[50] 5V input level shifter circuit for IGZO thin-film transistors
Lym, HongKyun
Oh, HwanSool
Pi, JaeEun
Hwang, Chi-Sung
Park, SangHee Ko
Park, KeeChan
IEICE ELECTRONICS EXPRESS, 2014, 11 (13):

← 1 2 3 4 5 →