Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric

被引：4
|
作者：
Hyung, Gun Woo [1 ]
Wang, Jian-Xun [2 ]
Li, Zhao-Hui [2 ]
Koo, Ja-Ryong [3 ]
Kwon, Sang Jik [2 ]
Cho, Eou-Sik [2 ]
Kim, Young Kwan [3 ]
机构：
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
[2] Gachon Univ, Dept Elect Engn, Songnam 461701, Kyunggi, South Korea
[3] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Amorphous InGaZnO Transistor; Polymeric Gate Dielectric Layer; Flexible Substrate; Semi-Transparent; ZINC-OXIDE; PERFORMANCE; FABRICATION;
D O I：
10.1166/jnn.2013.7029
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with cross-linked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 Omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum similar to 5.8 cm(2)/Vs) and on/off current ratios of similar to 10(6).
引用
收藏
页码：4052 / 4055
页数：4
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