New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

被引：12

作者：

Jeon, Dae-Young ^{[1
,3
]}

Park, So Jeong ^{[1
,3
]}

Mouis, Mireille ^{[1
]}

Barraud, Sylvain ^{[2
]}

Kim, Gyu-Tae ^{[3
]}

Ghibaudo, Gerard ^{[1
]}

机构：

[1] Grenoble INP, IMEP LAHC, Minatec, F-38016 Grenoble, France

[2] CEA LETI Minatec, F-38054 Grenoble, France

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2013年 / 89卷

基金：

新加坡国家研究基金会;

关键词：

Junctionless transistors (JLTs); Extraction method; Bulk channel mobility; Flat-band voltage; 2D numerical simulation; Maserjian's-like function for g(m); NANOWIRE TRANSISTORS; MOS STRUCTURES; SILICON;

D O I：

10.1016/j.sse.2013.08.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：139 / 141

页数：3

共 50 条

[41] Magnetoresistance technique for mobility extraction in short channel FDSOI transistors
Chaisantikulwat, W
Mouis, M
Ghibaudo, G
Gallon, C
Fenouillet-Beranger, C
Maude, DK
Skotnicki, T
Cristoloveanu, S
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 569 - 572
[42] FLAT-BAND VOLTAGE OF A-SI PIN SOLAR-CELLS FROM SPECTRAL CHARACTERISTICS
PFLEIDERER, H
KUSIAN, W
GUNZEL, E
GRABMAIER, J
CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 180 - 185
[43] SINGLE ELECTRODE-POTENTIALS RELATED TO FLAT-BAND VOLTAGE MEASUREMENTS ON EOS AND MOS STRUCTURES
BOUSSE, L
JOURNAL OF CHEMICAL PHYSICS, 1982, 76 (10): : 5128 - 5133
[44] Flat-band voltage shift in metal-gate/high-k/Si stacks
Huang An-Ping
Zheng Xiao-Hu
Xiao Zhi-Song
Yang Zhi-Chao
Wang Mei
Chu, Paul K.
Yang Xiao-Dong
CHINESE PHYSICS B, 2011, 20 (09)
[45] Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology
Yao, Jiaxin
Yin, Huaxiang
Wu, Zhenhua
Gao, Jianfeng
Zhang, Qingzhu
Hou, Zhaozhao
Gu, Jie
Luo, Kun
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (08) : Q152 - Q158
[46] New saturated ferromagnetism in the flat-band Hubbard model in high electron filling
Watanabe, Y
Miyashita, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1997, 66 (07) : 2123 - 2128
[47] Re-examination of Flat-Band Voltage Shift for High-k MOS Devices
Iwamoto, K.
Ogawa, A.
Kamimuta, Y.
Watanabe, Y.
Mizubayashi, W.
Migita, S.
Morita, Y.
Takahashi, M.
Ito, H.
Ota, H.
Nabatame, T.
Toriumi, A.
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 70 - +
[48] Influence of treatment conditions on the flat-band voltage of poly-SiO2/Si structure
Xiang, Shao-Hua
Xie, Mao-Nong
Zhang, Ming-Gao
Liao, Wei
Bandaoti Guangdian/Semiconductor Optoelectronics, 2002, 23 (02):
[49] Flat-bands on partial line graphs - Systematic method for generating flat-band lattice structures
Miyahara, S
Kubo, K
Ono, H
Shimomura, Y
Furukawa, N
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2005, 74 (07) : 1918 - 1921
[50] Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method
Cho, In-Tak
Park, Ick-Joon
Kong, Dongsik
Kim, Dae Hwan
Lee, Jong-Ho
Song, Sang-Hun
Kwon, Hyuck-In
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) : 815 - 817

← 1 2 3 4 5 →