Silicon carbide detectors of high-energy particles

被引：8

作者：

Violina, GN ^{[1
]}

Kalinina, EV

Kholujanov, GF

Kossov, VG

Yafaev, RR

Hallén, A

Konstantinov, AO

机构：

[1] St Petersburg State Univ Elect Engn, St Petersburg 197376, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Elektron Optron, St Petersburg 194223, Russia

[4] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden

[5] ACREO AB, SE-16440 Kista, Sweden

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1485676

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：710 / 713

页数：4

共 50 条

[41] HIGH-ENERGY SOLAR PARTICLES
QUENBY, JJ
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1976, 281 (1304): : 491 - 496
[42] Hunt is on for high-energy particles
Bowler, S
[J]. ASTRONOMY & GEOPHYSICS, 2003, 44 (06) : 5 - 5
[43] Fabrication of silicon carbide reinforced aluminium powders by high-energy ball-milling
Wielage, B.
Nestler, D.
Siebeck, S.
Podlesak, H.
[J]. MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK, 2010, 41 (06) : 476 - 481
[44] Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams
Tsvetkova, T.
Sellin, P.
Carius, R.
Angelov, O.
Dimova-Malinovska, D.
Zuk, J.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9): : 1583 - 1587
[45] Amorphous silicon vertical pixel development for high-energy particle detectors: Modelling and technology
Negru, R.
Bonnassieux, Y.
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2619 - 2622
[46] Scintillator Gamma-Ray Detectors with Silicon Photomultiplier Readouts for High-Energy Astronomy
Bloser, Peter F.
Legere, Jason
Bancroft, Christopher
McConnell, Mark L.
Ryan, James M.
Schwadron, Nathan
[J]. UV, X-RAY, AND GAMMA-RAY SPACE INSTRUMENTATION FOR ASTRONOMY XVIII, 2013, 8859
[47] Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams
Tsvetkova, T.
Takahashi, S.
Sellin, P.
Gomez-Morilla, I.
Angelov, O.
Dimova-Malinovska, D.
Zuk, J.
[J]. ACTA PHYSICA POLONICA A, 2011, 120 (01) : 56 - 59
[48] DISTRIBUTION OF PHOSPHORUS CREATED IN SILICON BY IRRADIATION WITH HIGH-ENERGY ALPHA-PARTICLES
GORNUSHKINA, ED
DIDIK, VA
KOZLOVSKII, VV
MALKOVICH, RS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (11): : 1232 - 1233
[49] THE TRANSMISSION DIFFRACTION PATTERNS OF SILICON IMPLANTED WITH HIGH-ENERGY ALPHA-PARTICLES
WIETESKA, K
WIERZCHOWSKI, W
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) : A74 - A77
[50] Scattering of high-energy positively charged particles in ultrashort oriented silicon crystal
Shulga, S. N.
V. Kyryllin, I.
Shulga, N. F.
[J]. PHYSICAL REVIEW ACCELERATORS AND BEAMS, 2024, 27 (02)

← 1 2 3 4 5 →