Silicon carbide detectors of high-energy particles

被引：8
|
作者：
Violina, GN [1 ]
Kalinina, EV
Kholujanov, GF
Kossov, VG
Yafaev, RR
Hallén, A
Konstantinov, AO
机构：
[1] St Petersburg State Univ Elect Engn, St Petersburg 197376, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Elektron Optron, St Petersburg 194223, Russia
[4] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
[5] ACREO AB, SE-16440 Kista, Sweden
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1485676
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed. (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码：710 / 713
页数：4
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