Optical and Electrophysical Properties of Thin Zinc Oxide Films Doped with Scandium and Obtained by Laser Deposition

Nanostructured thin films on a silicon substrate were obtained by high-frequency pulse-periodic laser action (f ~ 10-15 kHz) with wavelength lambda = 1.064 mu m and power density q = 85 MW/cm(2) on zinc oxide ceramic doped with scandium oxide in a vacuum chamber with pressure p = 2 center dot 10(-2) mm Hg. The morphology of the obtained films was studied by atomic-force microscopy. Features of the transmission spectra in the visible and near and middle infrared regions were shown. The luminescence spectra obtained by excitation at various wavelengths were practically unchanged. The electrophysical properties of the ZnO + 0.9% Sc2O3/Si heterostructure were analyzed. It was established that the main conduction mechanism is current limited by space charge in an oxide film with deep traps.