Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition

被引:4
|
作者
Fu, Xiao [1 ]
Yao, Rihui [1 ]
Liang, Zhihao [1 ]
Luo, Dongxiang [2 ,3 ]
Xu, Zhuohui [4 ]
Li, Yilin [1 ]
Chen, Nanhong [1 ]
Hu, Chunyuan [5 ]
Ning, Honglong [1 ]
Peng, Junbiao [1 ]
机构
[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
[2] South China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
[3] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China
[4] Yulin Normal Univ, Guangxi Key Lab Agr Resources Chem & Biotechnol, Yulin 537000, Peoples R China
[5] State Key Lab Adv Mat & Elect Components, Fenghua Elect Ind Pk, 18 Fenghua Rd, Zhaoqing 526020, Peoples R China
基金
中国国家自然科学基金;
关键词
Laser energy; Pulsed laser deposition; Neodymium-doped indium-zinc-oxide; OPTICAL-PROPERTIES; SEMICONDUCTORS; ND;
D O I
10.1016/j.spmi.2021.107059
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The neodymium (Nd) doped indium-zinc-oxide (NIZO) is a material with high mobility and great potential in transparent electronic devices. NIZO thin films were prepared by pulsed laser deposition (PLD) at 250, 350, 450, and 550 mJ/pulse laser energy, respectively. With the increase of laser energy, the films gradually change from an amorphous to an amorphous/crystalline state and the In2O3 crystals have preferential growth in the (123) plane. The average transmittance of the film is higher than 80% in the visible range. When the laser energy is 250 mJ, the carrier mobility has the highest value of 14.43 cm(2) V-1 s(-1), and it decreases with the increase of laser energy. The possible reason for this phenomenon is given by electronic structure and crystallization. Based on the content of defect states and the emitted particle number, the carrier concentration of the films is analyzed.
引用
收藏
页数:8
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