Feshbach resonances in Si-,Ge- and Sn- negative ion photodetachment

被引：1
|
作者：
Ivanov, VK [1 ]
Kashenock, GY [1 ]
Lapkin, CV [1 ]
机构：
[1] St Petersburg State Univ, Dept Expt Phys, St Petersburg, Russia
来源：
FIFTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2002年 / 4627卷
关键词：
electron affinity; many-body theory; negative ion; photodetachment; random phase approximation; resonance;
D O I：
10.1117/12.456242
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np(3) half-filled shells. The photodetachment cross sections from two outer shells of Si-, Ge- and Sn- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound "nsnp(4)" states revealed themselves as a very sensitive interference structure in the cross section.
引用
收藏
页码：43 / 48
页数：6
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