Feshbach resonances in Si-,Ge- and Sn- negative ion photodetachment

被引：1

作者：

Ivanov, VK ^{[1
]}

Kashenock, GY ^{[1
]}

Lapkin, CV ^{[1
]}

机构：

[1] St Petersburg State Univ, Dept Expt Phys, St Petersburg, Russia

来源：

FIFTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2002年 / 4627卷

关键词：

electron affinity; many-body theory; negative ion; photodetachment; random phase approximation; resonance;

D O I：

10.1117/12.456242

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np(3) half-filled shells. The photodetachment cross sections from two outer shells of Si-, Ge- and Sn- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound "nsnp(4)" states revealed themselves as a very sensitive interference structure in the cross section.

引用

页码：43 / 48

页数：6

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