Effect of aluminum trace dimension on electro-migration failure in flip-chip package

被引：0
|
作者：
Liu, Peisheng [1 ]
Fan, Guangming [1 ]
Liu, Yahong [1 ]
Yang, Longlong [1 ]
Miao, Xiaoyong [2 ]
机构：
[1] Nantong Univ, Coll Elect & Informat, Jiangsu Key Lab ASIC Design, Nantong 226019, Peoples R China
[2] Wuhan Univ, Elect Informat Sch, Wuhan 430072, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2017年 / 31卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Flip-chip; reliability; Joule heating; current density; electro-migration; packaging;
D O I：
10.1142/S0217979217410028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 3D model of flip-chip package is established and thermal-electrical coupling is analyzed. The effect of the width of Aluminum (Al) trace on electro-migration mechanism is also studied. Reducing rates of the hot-spot temperature, the max Joule heating, the max temperature gradient and the max current density are defined to research the effects of the Al trace thickness and the UBM thickness on electro-migration.
引用
收藏
页数：10
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