Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

被引：10
|
作者：
Maldonado, D. [1 ]
Roldan, A. M. [1 ]
Gonzalez, M. B. [2 ]
Jimenez-Molinos, F. [1 ]
Campabadal, F. [2 ]
Roldan, J. B. [1 ]
机构：
[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Computadores, Avd Fuentenueva S-N, E-18071 Granada, Spain
[2] IMB CNM CSIC, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain
来源：
MICROELECTRONIC ENGINEERING | 2019年 / 215卷
关键词：
Magnetic field effects; RRAM; Resistive switching; Set voltage; Reset voltage; COMPACT MODEL; TEMPERATURE; MODULATION; DEVICES;
D O I：
10.1016/j.mee.2019.110983
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A characterization process for resistive RAM (RRAMs) based on TiN/Ti/HfO2/W stacks has been performed. In addition to conventional electrical measurements, the effects of the magnetic field (MF) have also been considered. The influence of the Lorenz force on resistive switching (RS) processes and on the device conduction was explored both in the Low Resistance State (LRS) and in the High Resistance State (HRS). The MF influences the set/reset voltages and current distributions, spreading the range of current values obtained in a long RS series of successive set and reset cycles and modifying set voltage values. For the reset voltage, the influence is less significant than the cycle-to-cycle variability.
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收藏
页数：5
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