The planar 6H-SiC ACCUFET: A new high-voltage power MOSFET structure

被引：58
|
作者：
Shenoy, PM
Baliga, BJ
机构：
[1] Power Semiconductor Research Center, North Carolina State University, Raleigh
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 12期
关键词：
D O I：
10.1109/55.644080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel planar accumulation channel SIC MOSFET structure is reported in this paper. The problems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFET's are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 m Omega.cm(2) at room temperature for a gate bias of only 5 V. This measured specific on-resistance is within 2.5x of the value calculated for the epitaxial drift region (10(16) cm(-3), 10 mu m), which is capable of supporting 1500 V.
引用
收藏
页码：589 / 591
页数：3
相关论文
共 50 条
  • [1] High voltage planar 6H-SiC ACCUFET
    Shenoy, PM
    Baliga, BJ
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 993 - 996
  • [2] High-voltage double-implanted power MOSFET's in 6H-SiC
    Shenoy, JN
    Cooper, JA
    Melloch, MR
    [J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) : 93 - 95
  • [3] Analysis and optimization of the planar 6H-SiC ACCUFET
    Shenoy, PM
    Baliga, BJ
    [J]. SOLID-STATE ELECTRONICS, 1999, 43 (02) : 213 - 220
  • [4] A 475-V high-voltage 6H-SiC lateral MOSFET
    Saks, NS
    Mani, SS
    Agarwal, AK
    Ancona, MG
    [J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (08) : 431 - 433
  • [5] HIGH-VOLTAGE 6H-SIC RECTIFIERS - PROSPECTS AND PROGRESS
    NEUDECK, PG
    LARKIN, DJ
    POWELL, JA
    MATUS, LG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2130 - 2130
  • [6] Silicon planar ACCUFET: improved power MOSFET structure
    Bobde, MD
    Baliga, BJ
    [J]. ELECTRONICS LETTERS, 2000, 36 (10) : 913 - 915
  • [7] Comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs
    Chilukuri, RK
    Shenoy, PM
    Baliga, BJ
    [J]. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 115 - 118
  • [8] PLANAR, ION-IMPLANTED, HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
    SHENOY, PM
    BALIGA, BJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) : 454 - 456
  • [9] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
    MATUS, LG
    POWELL, JA
    SALUPO, CS
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1770 - 1772
  • [10] High voltage (450 V) 6H-SIC lateral MESFET structure
    Alok, D
    Baliga, BJ
    [J]. ELECTRONICS LETTERS, 1996, 32 (20) : 1929 - 1931
12345