Impact of incorporating sodium into polycrystalline p-type Cu2O for heterojunction solar cell applications

被引:55
|
作者
Minami, Tadatsugu [1 ]
Nishi, Yuki [1 ]
Miyata, Toshihiro [1 ]
机构
[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan
关键词
CUPROUS-OXIDE; ELECTRICAL-PROPERTIES; EFFICIENCY; FILMS; SHEETS;
D O I
10.1063/1.4902879
中图分类号
O59 [应用物理学];
学科分类号
摘要
The resistivity was controlled in the range of 10(3) to 10(-2) Omega cm in polycrystalline p-type Cu2O sheets (incorporating sodium (Na)), which are suitable for Cu2O-based heterojunction solar cell applications. The Na-doped Cu2O sheets exhibited a hole concentration that ranged from 10(13) to 10(19) cm(-3). In particular, a hole concentration of 10(13) -10(16) cm(-3) was obtained while maintaining a high Hall mobility above 100 cm(2)/V s, and, in addition, a degenerated semiconductor exhibiting metallic conduction was realized with a hole concentration above about 1 x 10(19) cm(-3). The mechanism associated with the Na doping can be explained by a copper vacancy produced due to charge compensation effects that result when a Na atom is incorporated at an interstitial site in the Cu2O lattice. For solar cell applications, the use of the Cu2O: Na sheet in a heterojunction solar cell successfully improved the obtained efficiency over that found in heterojunction solar cells fabricated using an undoped Cu2O sheet. (C) 2014 AIP Publishing LLC.
引用
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页数:5
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