Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device

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作者
Chuang Zhao
Jiaqi Pan
Beibei Wang
Zongjun Dong
Ziyuan Jiang
Jingjing Wang
Changsheng Song
Yingying Zheng
Chaorong Li
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[1] Zhejiang Sci-Tech University,Department of Physics, Key Laboratory of ATMMT Ministry of Education
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摘要
The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p–n junction and Ag0 nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.
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页码:20485 / 20492
页数:7
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