Ohmic contact on single ZnO nanowires grown by MOCVD

被引：12
|
作者：
Geng, Wei [1 ]
Kostcheev, Sergei [1 ]
Sartel, Corinne [3 ]
Sallet, Vincent [3 ]
Molinari, Michael [2 ]
Simonetti, Olivier
Lerondel, Gilles [1 ,2 ]
Giraudet, Louis [2 ]
Couteau, Christophe [1 ]
机构：
[1] Univ Technol Troyes, CNRS UMR 6279, Inst Charles Delaunay, Lab Nanotechnol & Instrumentat Opt, F-10000 Troyes, France
[2] Univ Reims, Lab Rec Nanosci, F-51685 Reims, France
[3] Univ Versailles, CNRS, GEMAC, F-78035 Versailles, France
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10 | 2013年 / 10卷 / 10期
关键词：
ZnO; nanowires; ohmic contact; nanofabrication; FIELD-EFFECT TRANSISTOR; PHOTODETECTORS; DIODE;
D O I：
10.1002/pssc.201200984
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present work on the fabrication and the characterization of ohmic contacts on single zinc oxide nanowires grown by metalorganic chemical vapour deposition. We demonstrate pre-positionning of single nanowires before electronic-beam lithography for 2 point metallic contacts. We characterize single nanowires by microphotoluminescence and by current-voltage measurements. I-V results present a linear curve down to 1 mV with resistivities from 0.23 to 2.4 Omega center dot cm are measured, consistent with previous observation on ZnO nanowires. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1292 / 1296
页数：5
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