Mechanical Induced Defects and Fractures in the Silicon Solar Cell Structure

Presented research is involved in excess electrical currents created when the silicon material contains cracks and fractures. We performed transport characteristics measurements and electrical noise measurement as well as sample visible and deep infrared imaging. It turns out that mechanical induced defects are followed by specific electric characteristics. We observe crack-related local breakdowns and local overheating. It is also followed by the electrical current fluctuation in the 1/f form. All regions are thermally but also electrically stressed and the irreversible sample degradation originates. It could be pointed out that our detection methods are very sensitive and they could be used for analyses of different materials.