Oxide scaling limit for future logic and memory technology

被引：26

作者：

Stathis, JH ^{[1
]}

DiMaria, DJ ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00413-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The limit of MOSFET oxide scaling is examined from the viewpoint of reliability. Measurements of the voltage dependence of the defect generation rate and the thickness dependence of the critical defect density, together with the breakdown statistics for ultra-thin oxides, are used to provide a general framework for predicting the lifetime of ultra-thin oxides at operating voltage. It is argued that reliability is the limiting factor for oxide thickness reduction.

引用

页码：395 / 401

页数：7

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