Auger depth profiling of thin SiC layers -: practical aspects for a better understanding of quantitative analysis

被引：2

作者：

Pieterwas, R ^{[1
]}

Kosiba, R ^{[1
]}

Ecke, G ^{[1
]}

Pezoldt, J ^{[1
]}

Rössler, H ^{[1
]}

机构：

[1] IGH Automat GmbH, D-40467 Langenfeld, Germany

来源：

THIRD INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2000年 / 4064卷

关键词：

factor analysis; principal component analysis; indicator function; Auger electron spectroscopy;

D O I：

10.1117/12.375442

中图分类号：

TP31 [计算机软件];

学科分类号：

081202 ; 0835 ;

摘要：

The element sensitivity factors method and the factor analysis are the most important methods for quantification of Auger depth profiles. The present paper puts forward a criterion for the decision in which cases the use of factor analysis is necessary for the quantification. The presented criterion uses the fact, that changed chemical bonds via sample depth are connected with changed element sensitivity factors. A chosen SiC-Si sample was investigated by Target Factor Analysis. The influence of data pretreatment like data selection, normalisation and filtering are discussed.

引用

页码：281 / 287

页数：3

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