Band Lineup Issues Related with High-k/SiO2/Si Stack

被引：3

作者：

Xiang, Jinjuan ^{[1
]}

Wang, Xiaolei ^{[1
]}

Li, Tingting ^{[1
]}

Zhao, Chao ^{[1
]}

Wang, Wenwu ^{[1
]}

Li, Junfeng ^{[1
]}

Liang, Qingqing ^{[1
]}

Chen, Dapeng ^{[1
]}

Ye, Tianchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期

关键词：

OFFSETS; OXIDES;

D O I：

10.1149/05004.0293ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Band lineups of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The observed XPS results are interpreted and attributed to lower CNLs of HfO2 and Al2O3 than SiO2/Si stack, indicating feasibility of gap state based theory in investigating band lineup of oxide/semiconductor and oxide/oxide heterojunctions.

引用

页码：293 / 298

页数：6

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