Band Lineup Issues Related with High-k/SiO2/Si Stack

被引：3
|
作者：
Xiang, Jinjuan [1 ]
Wang, Xiaolei [1 ]
Li, Tingting [1 ]
Zhao, Chao [1 ]
Wang, Wenwu [1 ]
Li, Junfeng [1 ]
Liang, Qingqing [1 ]
Chen, Dapeng [1 ]
Ye, Tianchun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
来源：
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期
关键词：
OFFSETS; OXIDES;
D O I：
10.1149/05004.0293ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Band lineups of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The observed XPS results are interpreted and attributed to lower CNLs of HfO2 and Al2O3 than SiO2/Si stack, indicating feasibility of gap state based theory in investigating band lineup of oxide/semiconductor and oxide/oxide heterojunctions.
引用
收藏
页码：293 / 298
页数：6
相关论文
共 50 条
  • [21] Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC
    Kumta, A.
    Rusli
    Xia, J. H.
    APPLIED PHYSICS LETTERS, 2009, 94 (23)
  • [22] Electrical performance improvement in SiO2/HfSiO high-k gate stack for advanced low power device application
    Wang, MF
    Hou, TH
    Mai, KL
    Lim, PS
    Yao, LG
    Jin, Y
    Chen, SC
    Liang, MS
    Wu, WH
    Ou, SC
    Chen, MC
    Huang, TY
    2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, 2004, : 283 - 286
  • [23] Origin of electric dipoles formed at high-k/SiO2 interface
    Kita, Koji
    Toriumi, Akira
    APPLIED PHYSICS LETTERS, 2009, 94 (13)
  • [24] A Review on Ge Nanocrystals Embedded in SiO2 and High-k Dielectrics
    Lehninger, David
    Beyer, Jan
    Heitmann, Johannes
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (07):
  • [25] Electric dipole formation at high-k dielectric/SiO2 interface
    Han Kai
    Wang Xiaolei
    Yang Hong
    Wang Wenwu
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (03)
  • [26] Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics
    Padovani, Andrea
    La Torraca, Paolo
    Larcher, Luca
    Strand, Jack
    Shluger, Alexander
    2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023, : 93 - 96
  • [27] Study of interactions of Hf and SiO2 film for high-k materials
    Chiu, Te-Wei
    Tanabe, Masaaki
    Uedono, Akira
    Hasunuma, Ryu
    Yamabe, Kikuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (8 A): : 6253 - 6255
  • [28] Electric dipole formation at high-k dielectric/SiO2 interface
    韩锴
    王晓磊
    杨红
    王文武
    Journal of Semiconductors, 2015, 36 (03) : 154 - 156
  • [29] Study of interactions of Hf and SiO2 film for high-k materials
    Chiu, Te-Wei
    Tanabe, Masaaki
    Uedono, Akira
    Hasunuma, Ryu
    Yamabe, Kikuo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (8A): : 6253 - 6255
  • [30] Towards understanding degradation and breakdown of SiO2/high-k stacks
    Kauerauf, T
    Degraeve, R
    Cartier, E
    Govoreanu, B
    Blomme, P
    Kaczer, B
    Pantisano, L
    Kerber, A
    Groeseneken, G
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 521 - 524
12345