Band Lineup Issues Related with High-k/SiO2/Si Stack

被引：3
|
作者：
Xiang, Jinjuan [1 ]
Wang, Xiaolei [1 ]
Li, Tingting [1 ]
Zhao, Chao [1 ]
Wang, Wenwu [1 ]
Li, Junfeng [1 ]
Liang, Qingqing [1 ]
Chen, Dapeng [1 ]
Ye, Tianchun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
来源：
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期
关键词：
OFFSETS; OXIDES;
D O I：
10.1149/05004.0293ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Band lineups of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The observed XPS results are interpreted and attributed to lower CNLs of HfO2 and Al2O3 than SiO2/Si stack, indicating feasibility of gap state based theory in investigating band lineup of oxide/semiconductor and oxide/oxide heterojunctions.
引用
收藏
页码：293 / 298
页数：6
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