A WSe2/MoSe2 heterostructure photovoltaic device

被引：139
|
作者：
Floery, Nikolaus [1 ]
Jain, Achint [1 ]
Bharadwaj, Palash [1 ]
Parzefall, Markus [1 ]
Taniguchi, Takashi [2 ]
Watanabe, Kenji [2 ]
Novotny, Lukas [1 ]
机构：
[1] ETH, Photon Lab, CH-8092 Zurich, Switzerland
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 12期
基金：
瑞士国家科学基金会;
关键词：
WAALS; GROWTH;
D O I：
10.1063/1.4931621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the photovoltaic effect in a WSe2/MoSe2 heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10(4). Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe2/MoS2 heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory. (C) 2015 AIP Publishing LLC.
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页数：4
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