Modulation of electronic structures of MoSe2/WSe2 van der Waals heterostructure by external electric field

被引：11
|
作者：
Zhang, Fang [1 ]
Li, Wei [2 ]
Dai, Xianqi [3 ,4 ]
机构：
[1] Pingdingshan Univ, Coll Elect & Mech Engn, Pingdingshan 467000, Peoples R China
[2] Henan Univ Urban Construct, Sch Math & Phys, Pingdingshan 467036, Peoples R China
[3] Henan Normal Univ, Coll Phys & Mat Sci, Xinxiang 453007, Peoples R China
[4] Zhengzhou Normal Univ, Dept Phys, Zhengzhou 450044, Henan, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2017年 / 266卷
基金：
中国国家自然科学基金;
关键词：
External electric field; MoSe2/WSe2 vdW heterostructure; Band alignment; Band gap; METAL DICHALCOGENIDE HETEROSTRUCTURES; MOLYBDENUM DISELENIDE MOSE2; TOTAL-ENERGY CALCULATIONS; BILAYER MOS2; MONOLAYER; ABSORPTION; DIODES;
D O I：
10.1016/j.ssc.2017.08.010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
By using first-principles calculations, we investigate the electronic structures of MoSe2/WSe2 van der Waals(vdW) heterostructure by applying external electric field(E-ext) perpendicular to the layers. It is demonstrated that MoSe2/WSe2 heterostructure is a type-II vdW heterostructure. The band gap of MoSe2/WSe2 is significantly modulated by E-ext, eventually a semiconductor-to-metal transition can be realized. The positive and negative E-ext have different effects on the band gap due to the intrinsic spontaneous electric polarization in MoSe2/WSe2 heterostructure. Moreover, MoSe2/WSe2 heterobilayer experiences transitions from type-II to type-I and then to type-II under various E-ext. The present study provides great application potential of ultrathin MoSe2/WSe2 heterostructure in future nano-and optoelectronics.
引用
收藏
页码：11 / 15
页数：5
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