Thermopower of a single-electron transistor in the regime of strong inelastic cotunneling

被引:54
|
作者
Matveev, KA
Andreev, AV
机构
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 04期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.66.045301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study Coulomb blockade oscillations of thermoelectric coefficients of a single-electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E-C the transport of electrons is dominated by strong inelastic cotunneling. In this regime we find analytic expressions for the thermopower as a function of temperature T and the reflection amplitude r in the contact. In the case when the electron spins are polarized by a strong external magnetic field, the thermopower shows sinusoidal oscillations as a function of the gate voltage with the amplitude of the order of e(-1)\r\(T/E-C). We obtain qualitatively different results in the absence of the magnetic field. At temperatures between E-C and E-C\r\(2) the thermopower oscillations are sinusoidal with the amplitude of order e(-1)\r\(2)ln(E-C/T). On the other hand, at Tmuch less thanE(C)\r\(2) we find nonsinusoidal oscillations of the thermopower with the amplitude similar toe(-1)\r\rootT/E(C)ln(E-C/T).
引用
下载
收藏
页码:453011 / 4530115
页数:15
相关论文
共 50 条
  • [31] Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors
    Martinek, J
    Barnas, J
    Maekawa, S
    Schoeller, H
    Schön, G
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) : 143 - 145
  • [32] Calculating the Coulomb blockade phase diagram in the strong coupling regime of a single-electron transistor: a quantum Monte Carlo study
    Harata, Pipat
    Hongthong, Wipada
    Srivilai, Prathan
    JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT, 2024, 2024 (03):
  • [33] Single-electron transistor probes two-dimensional electron system in the quantum Hall regime
    Weis, J
    Wei, YY
    von Klitzing, K
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 17 - 21
  • [34] Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor
    Boese, D
    Schoeller, H
    EUROPHYSICS LETTERS, 2001, 54 (05): : 668 - 674
  • [35] Conductance of single-electron transistor with single island
    Sui Bing-Cai
    Fang Liang
    Zhang Chao
    ACTA PHYSICA SINICA, 2011, 60 (07)
  • [36] Strong suppression of shot noise in a feedback-controlled single-electron transistor
    Wagner, Timo
    Strasberg, Philipp
    Bayer, Johannes C.
    Rugeramigabo, Eddy P.
    Brandes, Tobias
    Haug, Rolf J.
    NATURE NANOTECHNOLOGY, 2017, 12 (03) : 218 - +
  • [37] VOLTAGE GAIN IN THE SINGLE-ELECTRON TRANSISTOR
    ZIMMERLI, G
    KAUTZ, RL
    MARTINIS, JM
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2616 - 2618
  • [38] Fully Overheated Single-Electron Transistor
    Laakso, M. A.
    Heikkila, T. T.
    Nazarov, Yuli V.
    PHYSICAL REVIEW LETTERS, 2010, 104 (19)
  • [39] Sketched oxide single-electron transistor
    Guanglei Cheng
    Pablo F. Siles
    Feng Bi
    Cheng Cen
    Daniela F. Bogorin
    Chung Wung Bark
    Chad M. Folkman
    Jae-Wan Park
    Chang-Beom Eom
    Gilberto Medeiros-Ribeiro
    Jeremy Levy
    Nature Nanotechnology, 2011, 6 : 343 - 347
  • [40] Thermal Conductance of a Single-Electron Transistor
    Dutta, B.
    Peltonen, J. T.
    Antonenko, D. S.
    Meschke, M.
    Skvortsov, M. A.
    Kubala, B.
    Koenig, J.
    Winkelmann, C. B.
    Courtois, H.
    Pekola, J. P.
    PHYSICAL REVIEW LETTERS, 2017, 119 (07)