Thermopower of a single-electron transistor in the regime of strong inelastic cotunneling

被引:54
|
作者
Matveev, KA
Andreev, AV
机构
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 04期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.66.045301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study Coulomb blockade oscillations of thermoelectric coefficients of a single-electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E-C the transport of electrons is dominated by strong inelastic cotunneling. In this regime we find analytic expressions for the thermopower as a function of temperature T and the reflection amplitude r in the contact. In the case when the electron spins are polarized by a strong external magnetic field, the thermopower shows sinusoidal oscillations as a function of the gate voltage with the amplitude of the order of e(-1)\r\(T/E-C). We obtain qualitatively different results in the absence of the magnetic field. At temperatures between E-C and E-C\r\(2) the thermopower oscillations are sinusoidal with the amplitude of order e(-1)\r\(2)ln(E-C/T). On the other hand, at Tmuch less thanE(C)\r\(2) we find nonsinusoidal oscillations of the thermopower with the amplitude similar toe(-1)\r\rootT/E(C)ln(E-C/T).
引用
下载
收藏
页码:453011 / 4530115
页数:15
相关论文
共 50 条
  • [21] Cotunneling in single-electron devices: Effects of stray capacitances
    Hu, GY
    OConnell, RF
    PHYSICAL REVIEW B, 1996, 54 (20): : 14560 - 14565
  • [22] Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime -: art. no. 014402
    Martinek, J
    Barnas, J
    Maekawa, S
    Schoeller, H
    Schön, G
    PHYSICAL REVIEW B, 2002, 66 (01): : 144021 - 144025
  • [23] Estimation of cotunneling in single-electron logic and its suppression
    Amakawa, Shuhei
    Fukui, Hironobu
    Fujishima, Minoru
    Hoh, Koichiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1146 - 1150
  • [24] Theory of strong inelastic cotunneling
    Furusaki, A
    Matveev, KA
    PHYSICAL REVIEW B, 1995, 52 (23): : 16676 - 16695
  • [25] Estimation of cotunneling in single-electron logic and its suppression
    Amakawa, S
    Fukui, H
    Fujishima, M
    Hoh, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1146 - 1150
  • [26] Edge strips in the quantum Hall regime imaged by a single-electron transistor
    Wei, YY
    Weis, J
    von Klitzing, K
    Eberl, K
    PHYSICAL REVIEW LETTERS, 1998, 81 (08) : 1674 - 1677
  • [27] Single-electron transistor logic
    Chen, RH
    Korotkov, AN
    Likharev, KK
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1954 - 1956
  • [28] Ferritin Single-Electron Transistor
    Labra-Munoz, Jacqueline A.
    van der Zant, Herre S. J.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2024, 128 (26): : 6387 - 6393
  • [29] Electron-hole cotunneling effect in coupled single-electron transistors
    Shin, M
    Kim, GH
    PHYSICAL REVIEW B, 2002, 66 (23) : 1 - 4
  • [30] Phase coherence in the inelastic cotunneling regime
    Sigrist, M
    Ihn, T
    Ensslin, K
    Loss, D
    Reinwald, M
    Wegscheider, W
    PHYSICAL REVIEW LETTERS, 2006, 96 (03)