Growth of 2''InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization

被引：9
|
作者：
Amon, J [1 ]
Zemke, D [1 ]
Hoffmann, B [1 ]
Muller, G [1 ]
机构：
[1] FREIBERGER ELEKT WERKSTOFFE GMBH,FREIBERG,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(96)00039-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InP and GaAs crystals with a diameter of 2 '' were grown by the vertical gradient freeze (VGF) technique. It is demonstrated by electrical and optical investigations that the VGF technique allows the growth of crystals with a uniform distribution of the dopants in both a macroscopic and a microscopic scale. The etch pit density in the VGF grown crystals is reduced compared to LEC-grown ones. Numerical modelling was used to optimize thermal boundary conditions.
引用
收藏
页码：646 / 650
页数：5
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