Growth of 2''InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization

被引：9

作者：

Amon, J ^{[1
]}

Zemke, D ^{[1
]}

Hoffmann, B ^{[1
]}

Muller, G ^{[1
]}

机构：

[1] FREIBERGER ELEKT WERKSTOFFE GMBH,FREIBERG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00039-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP and GaAs crystals with a diameter of 2 '' were grown by the vertical gradient freeze (VGF) technique. It is demonstrated by electrical and optical investigations that the VGF technique allows the growth of crystals with a uniform distribution of the dopants in both a macroscopic and a microscopic scale. The etch pit density in the VGF grown crystals is reduced compared to LEC-grown ones. Numerical modelling was used to optimize thermal boundary conditions.

引用

页码：646 / 650

页数：5

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