Growth of InP substrate crystals by the vertical gradient freeze technique

被引：0
|
作者：
Sahr, U [1 ]
Müller, G [1 ]
机构：
[1] Univ Erlangen Nurnberg, Crystal Growth Lab, D-91058 Erlangen, Germany
来源：
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS | 2002年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.
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页码：13 / 18
页数：6
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