Ferromagnetism Through Cr Doping In Topological Insulator Bi2Te3

In this paper we report the preparation of single crystals of Bi2Te3 and Cr-0.05(Bi2Te3)(0.95) by modified Bridgman method. XRD, EDX and SEM analysis of these crystals have been done for the confirmation of the purity of the samples. Resistivity measurement from 2 K to 300 K has been done by Vander-Pauw method. We observed 20% increase in resistivity after Cr doping. Hall measurement has been done at 2 K for both the samples and we found that after Cr doping charge carrier density has increased but mobility is decreased by a factor of similar to 7.9. We also provide evidence for ferromagnetism with Cr doping onto Bi2Te3.