Anti-ferromagnetism Through Mn Doping In Topological Insulator Bi2Se3

被引：1
|
作者：
Maurya, V. K. [1 ]
Yadav, P. K. [1 ]
Patnaik, S. [1 ]
机构：
[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源：
PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS) | 2015年 / 1665卷
关键词：
MnxBi2-xSe3; Topological Insulators; Magnetic doping;
D O I：
10.1063/1.4918189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bi2Se3 is a well-known Topological Insulator made of quintuple layers of Bi-Se-Bi-Se-Bi stacked with the Van-der-Waals forces which makes it a good accepter of doping at two places; Bi sites and interlayer gaps. In this paper we report the synthesis and characterization of single crystals of Mn doped Bi2Se3. SEM analysis confirms layered structure. Resistivity and Hall measurements have been done to determine charge carrier density and Hall coefficient. Susceptibility data is well fitted to the Curie-Weiss law within the transition range (5K to 125 K). A negative value of Theta(P) is indicative of weak anti-ferromagnetic correlation with low Mn doping.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping
    Choi, Y. H.
    Jo, N. H.
    Lee, K. J.
    Lee, H. W.
    Jo, Y. H.
    Kajino, J.
    Takabatake, T.
    Ko, K. -T.
    Park, J. -H.
    Jung, M. H.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (15)
  • [2] Reactive Chemical Doping of the Bi2Se3 Topological Insulator
    Benia, Hadj M.
    Lin, Chengtian
    Kern, Klaus
    Ast, Christian R.
    [J]. PHYSICAL REVIEW LETTERS, 2011, 107 (17)
  • [3] Gas Doping on the Topological Insulator Bi2Se3 Surface
    Koleini, Mohammad
    Frauenheim, Thomas
    Yan, Binghai
    [J]. PHYSICAL REVIEW LETTERS, 2013, 110 (01)
  • [4] Tailoring Magnetic Doping in the Topological Insulator Bi2Se3
    Zhang, Jian-Min
    Zhu, Wenguang
    Zhang, Ying
    Xiao, Di
    Yao, Yugui
    [J]. PHYSICAL REVIEW LETTERS, 2012, 109 (26)
  • [5] Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3
    Walsh, Lee A.
    Green, Avery J.
    Addou, Rafik
    Nolting, Westly
    Cormier, Christopher R.
    Barton, Adam T.
    Mowll, Tyler R.
    Yue, Ruoyu
    Lu, Ning
    Kim, Jiyoung
    Kim, Moon J.
    LaBella, Vincent P.
    Ventrice, Carl A., Jr.
    McDonnell, Stephen
    Vandenberghe, William G.
    Wallace, Robert M.
    Diebold, Alain
    Hinkle, Christopher L.
    [J]. ACS NANO, 2018, 12 (06) : 6310 - 6318
  • [6] Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films
    Zhang, Liguo
    Zhao, Dapeng
    Zang, Yunyi
    Yuan, Yonghao
    Jiang, Gaoyuan
    Liao, Menghan
    Zhang, Ding
    He, Ke
    Ma, Xucun
    Xue, Qikun
    [J]. APL MATERIALS, 2017, 5 (07):
  • [7] Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
    Glinka, Yuri D.
    Babakiray, Sercan
    Holcomb, Mikel B.
    Lederman, David
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (16)
  • [8] Theoretical and experimental investigations on Mn doped Bi2Se3 topological insulator
    Kumar, Ravi
    Banik, Soma
    Sen, Shashwati
    Jha, Shambhu Nath
    Bhattacharyya, Dibyendu
    [J]. PHYSICAL REVIEW MATERIALS, 2022, 6 (11)
  • [9] Ferromagnetism in Bi2Se3: Mn epitaxial layers
    von Bardeleben, H. J.
    Cantin, J. L.
    Zhang, D. M.
    Richardella, A.
    Rench, D. W.
    Samarth, N.
    Borchers, J. A.
    [J]. PHYSICAL REVIEW B, 2013, 88 (07):
  • [10] Surface oxidation of the topological insulator Bi2Se3
    Green, Avery J.
    Dey, Sonal
    An, Yong Q.
    O'Brien, Brendan
    O'Mullane, Samuel
    Thiel, Bradley
    Diebold, Alain C.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (06):
12345