Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM

被引：9
|
作者：
Herrera, M. [1 ,3 ]
Cremades, A. [1 ]
Stutzmann, M. [2 ]
Piqueras, J. [1 ]
机构：
[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Ctr Nanociencias & Nanotecnol, Ensenada 22800, Baja California, Mexico
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 4-5期
关键词：
GaN; Leakage current; AFM; Manganese doping; Cathodoluminescence; REVERSE-BIAS LEAKAGE; V-SHAPED PITS; FORMATION MECHANISM; DISLOCATIONS; NANOTUBES;
D O I：
10.1016/j.spmi.2008.12.023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The distribution, density and size of the pinholes depend on the Mn doping concentration. AFM Leakage Current images (LC) show a defined contrast at the pinhole planes {101 (1) over bar} in the sample with Mn concentration of 6.2 x 10(20) cm(-3). For the sample with an Mn concentration of 1.1 X 10(20) cm(-3), LC contrast appears around the pinholes, while no LC contrast was observed for sample with lower Mn concentration. CL measurements indicate that the samples exhibit strain related to Mn incorporation. In correlation with LC measurements, EBIC images show that pinholes are recombination sites. The combination of these techniques enabled us to analyze the Frenkel-Poole conduction in the samples and its relationship with the residual strain and the doping concentration in the films, which would exclude the mechanism of conduction through dislocations. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：435 / 443
页数：9
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