Substrate effects on the structure and optical properties of GaN epitaxial films

被引：0
|
作者：
U. Kaiser
A. N. Gruzintsev
I. I. Rhodos
W. Richter
机构：
[1] Friedrich-Schiller-Universität Jena,Institut für Festkörperphysik
[2] Russian Academy of Sciences,Institute of Microelectronics Technology and High
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Sapphire Substrate; Hexagonal Phase; Yellow Luminescence; Extrinsic Point Defect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The phase composition and luminescent properties of GaN films grown by molecular beam epitaxy on (0001) sapphire and 6H-SiC substrates were studied. The films grown on SiC were found to consist only of the hexagonal phase and contain a lower concentration of impurities. Grains of cubic GaN, as well as donor and acceptor impurities, were found in the GaN film grown on sapphire. The formation of impurity centers is caused by the diffusion of oxygen and aluminum from the sapphire substrate during crystal growth.
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页码：595 / 598
页数：3
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