Effect of ion beam milling on the defect structure of CdTe

被引：17
|
作者：
Panin, G [1 ]
Fernandez, P [1 ]
Piqueras, J [1 ]
机构：
[1] RUSSIAN ACAD SCI,INST MICROELECT TECHNOL & HIGH PUR MAT,CHERNOGOLOVKA 142432,RUSSIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 09期
关键词：
D O I：
10.1088/0268-1242/11/9/018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra of treated and untreated zones of the samples indicate that ion milling causes generation of tellurium vacancies and filling of cadmium vacancies in a subsurface layer. In addition, enhancement of the concentration of cadmium vacancy related defects in the region extending up to 20 mu m from the layer is revealed. This effect is discussed in connection with models of p- to n-type conversion of CdTe during ion milling.
引用
收藏
页码：1354 / 1357
页数：4
相关论文
共 50 条
  • [1] Defect structure rebuilding by ion beam milling of As and Sb doped p-Hg1-XCdXTe
    Berchenko, NN
    Bogoboyashchiy, VV
    Izhnin, II
    Vlasov, AP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (01): : 279 - 282
  • [2] DEFECT STRUCTURE OF CDTE
    KROGER, FA
    REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 205 - 210
  • [3] Ion beam milling effect on surface properties of HgCdTe
    Brogowski, P.
    Rutkowski, J.
    Piotrowski, J.
    Mucha, H.
    Electron Technology (Warsaw), 1991, 24 (3-4):
  • [4] Effect of focused ion beam milling on microcantilever loss
    Anthony, C. J.
    Torricelli, G.
    Prewett, P. D.
    Cheneler, D.
    Binns, C.
    Sabouri, A.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2011, 21 (04)
  • [5] Evolution of MBE HgCdTe defect structure studied with ion milling method
    Pociask-Bialy, Malgorzata
    INTERNATIONAL CONFERENCE ON SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONICS AND BIOSENSORS (IC SENOB 2016), 2017, 133
  • [6] Experimental investigation of the effect of defocus on beam diameter in focused ion beam milling
    Campbell, LCI
    Humphreys, CJ
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 157 - 158
  • [7] Ion beam milling probe
    Eur Semicond, 1 (S-41-S-43):
  • [8] Ion beam milling system
    不详
    POWDER METALLURGY, 1999, 42 (01) : 8 - 8
  • [9] Focused Ion Beam Milling of Perylene Microcrystals into Photonic Modules: Effect of Substrate and the Ion Beam Current
    Pradeep, Vuppu Vinay
    Ummethala, Govind
    Malladi, Sai Rama Krishna
    Chandrasekar, Rajadurai
    CRYSTAL GROWTH & DESIGN, 2023, 23 (08) : 5414 - 5420
  • [10] Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy
    Pociask, M.
    Izhnin, I. I.
    Dvoretsky, S. A.
    Mikhailov, N. N.
    Sidorov, Yu G.
    Varavin, V. S.
    Mynbaev, K. D.
    Sheregii, E.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (09)
12345