Effect of ion beam milling on the defect structure of CdTe

被引：17
|
作者：
Panin, G [1 ]
Fernandez, P [1 ]
Piqueras, J [1 ]
机构：
[1] RUSSIAN ACAD SCI,INST MICROELECT TECHNOL & HIGH PUR MAT,CHERNOGOLOVKA 142432,RUSSIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 09期
关键词：
D O I：
10.1088/0268-1242/11/9/018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra of treated and untreated zones of the samples indicate that ion milling causes generation of tellurium vacancies and filling of cadmium vacancies in a subsurface layer. In addition, enhancement of the concentration of cadmium vacancy related defects in the region extending up to 20 mu m from the layer is revealed. This effect is discussed in connection with models of p- to n-type conversion of CdTe during ion milling.
引用
收藏
页码：1354 / 1357
页数：4
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