Laser-induced fast etching and metallization of SiC ceramics

Experimental results on the etching of SiC ceramics induced by a copper vapor laser in various environments (air, (CH3)(2)SO (DMSO), N2H4, H2O) are presented. Strongly non-equilibrium conditions of the etching process result in the decomposition of the SiC ceramics surface. XPS and X-ray diffractometry reveal the following layered structure of SiC ceramics etched in air: an amorphous oxide layer SiOx, a several mu m thick layer of Si clusters with an average size of 300 Angstrom, and a partially amorphous underlying layer of SiC. The areas of SiC ceramics etched in liquid environment do not contain any debris, SiC ceramics etched in air and in N2H4 promotes the electroless deposition of both Ni and Cu from corresponding electroless solutions resulting in the selective metallization of irradiated areas. Unoxidized Si species are the catalytic centers responsible for the initiation of metal deposition. The effects of the surrounding medium on the morphology of the etched area observed by scanning electron microscopy and atomic force microscopy are discussed.