Measurement of Crystallization Temperature Using Thermography for Thin Film Amorphous Alloy Samples

被引：6
|
作者：
Hata, Seiichi [1 ]
Aono, Yuko [1 ]
Sakurai, Junpei [1 ]
Shimokohbe, Akira
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期
关键词：
ARC PLASMA DEPOSITION; METALLIC-GLASS;
D O I：
10.1143/APEX.2.036501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This report describes a new non-contact measurement method for the crystallization temperature (T(x)) of a thin film amorphous alloy. The thermal emissivity of the amorphous alloy sample is predicted to be modified when it crystallizes. It was attempted to relate this modification to changes in the apparent temperature by thermography. Thin film amorphous alloys of Pt(67)Si(33) and Pt(73)Si(27) were sputtered onto an Al(2)O(3) substrate and then heated at 20 K/min in vacuum, and the film temperature was monitored by thermography. The T(x) indicated by the proposed method coincided with the temperature measured by conventional differential scanning calorimeter within 8 K. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.036501
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application
    Kim, BD
    Jung, H
    Kim, GB
    Joo, SK
    MICROELECTRONICS JOURNAL, 2003, 34 (09) : 767 - 771
  • [42] Crystallization kinetics of Ni-Mn alloy thin film using molecular dynamics simulation
    Wang, Yulong
    Wang, Qidong
    Liu, Ning
    Chen, Jiuye
    Wang, Zhenhua
    Tan, Changlong
    Sheng, Zongyao
    FERROELECTRICS, 2019, 549 (01) : 234 - 240
  • [43] Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin
    Yamasaki, Koji
    Ochi, Masahiro
    Sugawara, Yuta
    Yamashita, Ichiro
    Uraoka, Yukiharu
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (03) : 842 - 845
  • [44] In situ spectromicroscopic study of nickel induced lateral crystallization of amorphous silicon thin film using SPESM
    Hong, Ie- Hong
    Hsu, Ting-Chang
    Yen, Shang-Chieh
    Lin, Fu-Shiang
    Huang, Mao-Lin
    Chen, Chia-Hao
    SURFACE SCIENCE, 2007, 601 (02) : 301 - 307
  • [45] Measurement of LED Junction Temperature Using Thermoreflectance Thermography
    Ling, J. H. L.
    Tay, A. A. O.
    2014 15TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2014, : 1482 - 1485
  • [46] Multivariant measurement for thin film adhesion as a function of temperature and thin film thickness
    Chiang, MYM
    Song, R
    Karim, A
    Amis, EJ
    NANOTECH 2003, VOL 3, 2003, : 254 - 257
  • [47] Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology
    Cheung, WM
    Cheng, CF
    Poon, MC
    Kok, CW
    Chan, M
    2002 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2002, : 27 - 30
  • [48] Temperature measurement of carbon nanotubes using infrared thermography
    Boldor, Dorin
    Gerbo, Nicholas M.
    Monroe, William T.
    Palmer, Jason H.
    Li, Zhongrui
    Biris, Alexandru S.
    CHEMISTRY OF MATERIALS, 2008, 20 (12) : 4011 - 4016
  • [49] ANNEALING AND CRYSTALLIZATION PROCESSES IN A HYDROGENATED AMORPHOUS SI-C ALLOY FILM
    BASA, DK
    SMITH, FW
    THIN SOLID FILMS, 1990, 192 (01) : 121 - 133
  • [50] THIN FILM THERMOCOUPLES FOR SUBSTRATE TEMPERATURE MEASUREMENT
    MORRISON, RD
    LACHENMA.RR
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01): : 106 - &
12345