Measurement of Crystallization Temperature Using Thermography for Thin Film Amorphous Alloy Samples

被引：6
|
作者：
Hata, Seiichi [1 ]
Aono, Yuko [1 ]
Sakurai, Junpei [1 ]
Shimokohbe, Akira
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期
关键词：
ARC PLASMA DEPOSITION; METALLIC-GLASS;
D O I：
10.1143/APEX.2.036501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This report describes a new non-contact measurement method for the crystallization temperature (T(x)) of a thin film amorphous alloy. The thermal emissivity of the amorphous alloy sample is predicted to be modified when it crystallizes. It was attempted to relate this modification to changes in the apparent temperature by thermography. Thin film amorphous alloys of Pt(67)Si(33) and Pt(73)Si(27) were sputtered onto an Al(2)O(3) substrate and then heated at 20 K/min in vacuum, and the film temperature was monitored by thermography. The T(x) indicated by the proposed method coincided with the temperature measured by conventional differential scanning calorimeter within 8 K. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.036501
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页数：3
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