Measurement of Crystallization Temperature Using Thermography for Thin Film Amorphous Alloy Samples

This report describes a new non-contact measurement method for the crystallization temperature (T(x)) of a thin film amorphous alloy. The thermal emissivity of the amorphous alloy sample is predicted to be modified when it crystallizes. It was attempted to relate this modification to changes in the apparent temperature by thermography. Thin film amorphous alloys of Pt(67)Si(33) and Pt(73)Si(27) were sputtered onto an Al(2)O(3) substrate and then heated at 20 K/min in vacuum, and the film temperature was monitored by thermography. The T(x) indicated by the proposed method coincided with the temperature measured by conventional differential scanning calorimeter within 8 K. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.036501