Electronic circuit design for RF energy harvesting using 28 nm FD-SOI technology

被引：3
|
作者：
Awad, M. [1 ]
Benech, P. [1 ]
Duchamp, J. M. [1 ]
机构：
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, Inst Engn,IMEPLAHC, F-38000 Grenoble, France
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2018年 / 60卷 / 06期
关键词：
dynamic back gate polarization; FDSOI; 28; nm; integrated circuit; radio-frequency energy harvesting;
D O I：
10.1002/mop.31157
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, a voltage doubler circuit designed using 28 nm FD-SOI technology has been studied for electromagnetic energy harvesting. NLVT transistor type is chosen and used as a diode for the realization of a Dickson voltage doubler circuit. Moreover, the impact of back gate polarization on circuit performance has been analyzed. The optimization of the circuit along with the measurement results has been presented (1.19 V for 1 stage at -26.3 dBm @ 2.45 GHz).
引用
收藏
页码：1349 / 1353
页数：5
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