Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces

被引：12

作者：

Dong, Hong ^{[1
]}

Cabrera, Wilfredo ^{[1
]}

Qin, Xiaoye ^{[1
]}

Brennan, Barry ^{[1
]}

Zhernokletov, Dmitry ^{[2
]}

Hinkle, Christopher L. ^{[1
]}

Kim, Jiyoung ^{[1
]}

Chabal, Yves J. ^{[1
]}

Wallace, Robert M. ^{[1
,2
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 10期

关键词：

silicon interfacial passivation layer; indium phosphide; high-k; diffusion; atomic layer deposition; CHEMICAL-VAPOR-DEPOSITION; AL2O3; THIN-FILMS; IN-SITU; THERMAL-STABILITY; INP(100) SURFACES; ENERGY; MECHANISMS; SILICATES; HAFNIUM; GROWTH;

D O I：

10.1021/am500752u

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 degrees C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.

引用

页码：7340 / 7345

页数：6

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